من فضلكم.... أريد كود Sciencedirect ... أرجوكم

[nour37]

Si tu n'arrives pas à télécharger des articles que t'en as besion, fais moi savoir, je peux le faire pour toi
Merci

[abkamel]

المشاركة الأصلية كتبت بواسطة nour37

Si tu n'arrives pas à télécharger des articles que t'en as besion, fais moi savoir, je peux le faire pour toi
Merci

لو تستطيع أن تحمل لي المقالات الآتية أكن لك شاكرا:

1. Band parameters for III–V compound semiconductors and their alloys
Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.;
Journal of Applied Physics
Volume: 89 , Issue: 11
Digital Object Identifier: 10.1063/1.1368156
Publication Year: 2001 , Page(s): 5815 - 5875


2. Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors
McAlister, S. P.; McKinnon, W. R.; Driad, R.; Renaud, A. P.;
Journal of Applied Physics
Volume: 82 , Issue: 10
Digital Object Identifier: 10.1063/1.366388
Publication Year: 1997 , Page(s): 5231 - 5234

3. Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors
McKinnon, W. R.; Driad, R.; McAlister, S. P.; Renaud, A.; Wasilewski, Z. R.;
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Volume: 16 , Issue: 2
Digital Object Identifier: 10.1116/1.581020
Publication Year: 1998 , Page(s): 846 - 849

[nour37]

المشاركة الأصلية كتبت بواسطة abkamel

لو تستطيع أن تحمل لي المقالات الآتية أكن لك شاكرا:

1. Band parameters for III–V compound semiconductors and their alloys
Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.;
Journal of Applied Physics
Volume: 89 , Issue: 11
Digital Object Identifier: 10.1063/1.1368156
Publication Year: 2001 , Page(s): 5815 - 5875


2. Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors
McAlister, S. P.; McKinnon, W. R.; Driad, R.; Renaud, A. P.;
Journal of Applied Physics
Volume: 82 , Issue: 10
Digital Object Identifier: 10.1063/1.366388
Publication Year: 1997 , Page(s): 5231 - 5234

3. Temperature independent current blocking due to hot electrons in InAlAs/InGaAs double heterojunction bipolar transistors with composite collectors
McKinnon, W. R.; Driad, R.; McAlister, S. P.; Renaud, A.; Wasilewski, Z. R.;
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Volume: 16 , Issue: 2
Digital Object Identifier: 10.1116/1.581020
Publication Year: 1998 , Page(s): 846 - 849

J' ai les deux premiers articles, je suis désolé pour le troisième
https://ifile.it/dkfue2l/JApplPhys_89_5815.pdf
https://ifile.it/swiox7u/JApplPhys_82_5231.pdf
Merci

[abkamel]

المشاركة الأصلية كتبت بواسطة nour37

j' ai les deux premiers articles, je suis désolé pour le troisième
https://ifile.it/dkfue2l/japplphys_89_5815.pdf
https://ifile.it/swiox7u/japplphys_82_5231.pdf
merci

لك جزيل الشكر على هذه المساعدة، جعلها الله في ميزان حسناتك.